AM3406E3R datasheet(4/8 Pages) AITSEMI

4 / 8 page

AiT Semiconductor Inc.

www.ait-ic.com

AM3406

MOSFET

30V N-CHANNEL ENHANCEMENT MODE

REV2.0

- MAR 2011 RELEASED, APR 2019 UPDATED -

- 4 -

ELECTRICAL CHARACTERISTICS

TA = 25℃, unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static Parameters

Drain-Source Breakdown

Voltage

BVDSS

VGS=0V, ID=250μA

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250μA

1.5

Gate Leakage Current

IGSS

VDS=0V,VGS=±20V

±100

Zero Gate Voltage Drain

Current

IDSS

VDS=30V,VGS=0V, TJ=25°C

μA

VDS=24V,VGS=0V, TJ=75°C

Drain-Source On-Resistance

RDS(ON)

VGS=10V,ID=6.7A

mΩ

VGS=4.5V,ID=4.8A

VGS=3.5V,ID=2A

Forward Transconductance

GFS

VDS=15V, ID=6A

Diode Characteristics

Diode Forward Voltage

VSD

IS=1A,VGS=0V

0.7

1.0

Continuous Source Current

6.7

Reverse Recovery Time

trr

IS=6A, dl/dt=100A/μs,

TJ=25°C

Reverse Recovery Charge

Qrr

1.2

Dynamic and Switching Parameters

Total Gate Charge

VDS=15V, VGS=10V

ID=6A

12.7

17.8

Total Gate Charge(4.5V)

6.2

8.7

Gate-Source Charge

Qgs

2.4

3.4

Gate-Drain Charge

Qgd

2.8

Input Capacitance

Ciss

VDS=15V, VGS=0V

f=1MHz

550

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate Resistance

VGS=0V, VDS=0V, f=1MHz

2.4

Turn-On Time

td(on)

VDD=15V, VGEN=10V,

RG=6Ω, ID=1A

2.5

7.6

Turn-Off Time

td(off)

19.8

4.2

NOTE1: Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C.

NOTE2: Measure the value in a still air environment at TA=25°C, using an installation mounted on a 1 in2 FR-4 board, maximum junction

temperature TJ(MAX)=150°C.

NOTE3: TJ(MAX)=150°C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used.

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