14N65G-TQ2-R datasheet(4/9 Pages) UTC

4 / 9 page

14N65-TC

Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD

4 of 9

www.unisonic.com.tw

QW-R205-452.C



ELECTRICAL CHARACTERISTICS (T

C =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA

650

Drain-Source Leakage Current

IDSS

VDS=650V, VGS=0V

µA

Gate-Source Leakage Current

IGSS

VGS=±30V, VDS=0V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250μA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=7.0A

0.52

0.7

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1MHz

1960

Output Capacitance

COSS

200

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Total Gate Charge

VDS=300V, VGS=10V, ID=10A

IG=1mA (Note 1, 2)

Gate-Source Charge

QGS

Gate-Drain Charge

QGD

9.4

Turn-On Delay Time

tD(ON)

VDD=300V, VGS=10V, ID =10A,

RG =25Ω (Note 1, 2)

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

130

Turn-Off Fall Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

ISM

Drain-Source Diode Forward Voltage

VSD

VGS=0V, IS=14A

1.4

Reverse Recovery Time

trr

VGS=0V, IS=14A, di/dt=100A/μs

364

Reverse Recovery Charge

Qrr

4.5

μC

Notes: 1.

Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.

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