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14N65G-TQ2-R データシート(PDF) 8 Page - Unisonic Technologies |
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14N65G-TQ2-R データシート(HTML) 8 Page - Unisonic Technologies |
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8 / 9 page ![]() 14N65-TC Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 8 of 9 www.unisonic.com.tw QW-R205-452.C TYPICAL CHARACTERISTICS (Cont.) Gate Threshold Voltage vs. Junction Temperature Junction Temperature, TJ (°C) Source Current vs. Source-Drain Voltage Source-Drain Voltage, VSD (V) Drain Current vs. Gate-Source Voltage Gate-Source Voltage, VGS (V) Drain Current, ID (A) -50 0 50 150 100 25°C TA=150°C Drain-Source On-Resistance vs. Drain Current TA=25°C VGS=10V Pulsed TA=25°C Pulsed Drain Current vs. Junction Temperature Junction Temperature, TJ (°C) 0 25 50 75 100 125 150 0 2 4 6 10 8 ID=0.25mA Pulsed 0.8 1.6 0 -40°C Power Dissipation vs. Junction Temperature Junction Temperature, TJ (°C) 0 25 50 75 100 125 150 1 1.4 1.2 0.8 0.6 0.4 100 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 15 25 20 10 5 0 0.4 1.2 30 60 0 50 10 20 40 15 5 10 0 TO-220F1 TO-220F1 0 4 8 12 20 16 0.1 |
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