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R7FA4M2AB3CFL データシート(PDF) 36 Page - Renesas Technology Corp

部品番号 R7FA4M2AB3CFL
部品情報  Leading-performance 100 MHz Arm Cortex-M33 core, up to 512 KB code flash memory with background operation, 8 KB Data flash memory, and 128 KB SRAM with Parity/ECC.
PDF  92 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R7FA4M2AB3CFL データシート(HTML) 36 Page - Renesas Technology Corp

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Sub-clock oscillator output
SOSCCR.SOSTP
Sub-clock
tSUBOSCWT
Figure 2.11
Sub-clock oscillation start timing
2.3.3
Reset Timing
Table 2.19
Reset timing
Parameter
Symbol Min Typ Max
Unit Test conditions
RES pulse width
Power-on
tRESWP 0.7 —
—
ms
Figure 2.12
Deep Software Standby mode
tRESWD 0.6 —
—
ms
Figure 2.13
Software Standby mode, Subosc-speed
mode
tRESWS 0.3 —
—
ms
All other
tRESW
200 —
—
µs
Wait time after RES cancellation
tRESWT —
37.3 41.2
µs
Figure 2.12
Wait time after internal reset cancellation
(IWDT reset, WDT reset, software reset, SRAM parity error reset, SRAM ECC error
reset, bus master MPU error reset, TrustZone error reset)
tRESW2 —
324 397.7 µs
—
VCC
RES
Internal reset signal
(low is valid)
tRESWP
tRESWT
VCCmin
Figure 2.12
RES pin input timing under the condition that VCC exceeds VPOR voltage threshold
RES
Internal reset signal
(low is valid)
tRESWD, tRESWS, tRESW
tRESWT
Figure 2.13
Reset input timing
RA4M2 Datasheet
2. Electrical Characteristics
R01DS0367EJ0110 Rev.1.10
Jan 27, 2021
Page 36 of 92



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