R7FA4M2AB3CFL datasheet(23/92 Pages) RENESAS

部品番号	R7FA4M2AB3CFL

部品情報	Leading-performance 100 MHz Arm Cortex-M33 core, up to 512 KB code flash memory with background operation, 8 KB Data flash memory, and 128 KB SRAM with Parity/ECC.

PDF	92 Pages

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メーカー	RENESAS [Renesas Technology Corp]

ホームページ	http://www.renesas.com

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23 / 92 page

2.2.4

I/O VOH, VOL, and Other Characteristics

Table 2.6

I/O VOH, VOL, and other characteristics

Parameter

Symbol Min

Typ Max Unit Test conditions

Output voltage

IIC

VOL

—

0.4

IOL = 3.0 mA

VOL

—

0.6

IOL = 6.0 mA

IIC*1

VOL

—

0.4

IOL = 15.0 mA (ICFER.FMPE = 1)

VOL

—

0.4 —

IOL = 20.0 mA (ICFER.FMPE = 1)

Ports P205, P206, P407 to

P415, P708 (total 12 pins)*2

VOH

VCC – 1.0 —

—

IOH = –20 mA

VCC = 3.3 V

VOL

—

1.0

IOL = 20 mA

VCC = 3.3 V

Other output pins

VOH

VCC – 0.5 —

—

IOH = –1.0 mA

VOL

—

0.5

IOL = 1.0 mA

Input leakage current

RES

|Iin|

—

5.0

µA

Vin = 0 V

Vin = 5.5 V

Port P200

—

1.0

Vin = 0 V

Vin = VCC

Three-state leakage current

(off state)

5 V-tolerant ports

|ITSI|

—

5.0

µA

Vin = 0 V

Vin = 5.5 V

Other ports (except for port

P200)

—

1.0

Vin = 0 V

Vin = VCC

Input pull-up MOS current

Ports P0 to P7

–300

—

–10 µA

VCC = 2.7 to 3.6 V

Vin = 0 V

Input capacitance

USB_DP, USB_DM, and ports

P014, P015, P400, P401

Cin

—

Vbias = 0 V

Vamp = 20 mV

f = 1 MHz

Ta = 25°C

Other input pins

—

Note 1. SCL0_A, SDA0_A (total 2 pins).

Note 2. This is the value when high driving ability is selected in the Port Drive Capability bit in the PmnPFS register.

The selected driving ability is retained in Deep Software Standby mode.

RA4M2 Datasheet

2. Electrical Characteristics

R01DS0367EJ0110 Rev.1.10

Jan 27, 2021

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