DocID030317 Rev 2

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L6494

Electrical characteristics

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4

Electrical characteristics

Table 5. Electrical characteristics (VCC = 15 V; TJ = +25 °C; PGND = SGND)

Symbol

Pin

Parameter

Test condition

Min. Typ. Max. Unit

Low-side section supply

VCC_hys

VCC vs.

SGND

VCC UV hysteresis

-

0.5

0.6

0.72

V

VCC _thON

VCC UV turn ON threshold

-

8.7

9.3

9.8

V

VCC _thOFF

VCC UV turn OFF threshold

-

8.2

8.7

9.2

V

IQCCU

Undervoltage quiescent supply

current

VCC = SD = 7 V

IN = SGND

-

135

200

A

IQCC

Quiescent current

VCC = 15 V

SD = 5 V; IN = SGND

-

490

700

A

High-side floating section supply(1)

VBO_hys

BOOT vs.

OUT

VBO UV hysteresis

-

0.48

0.6

0.7

V

VBO_thON

VBO UV turn ON threshold

-

8.0

8.6

9.1

V

VBO_thOFF

VBO UV turn OFF threshold

-

7.5

8.0

8.5

V

IQBOU

Undervoltage VBO quiescent

current

VBO = SD = 7 V

IN = SGND

-20

30

A

IQBO

VBO quiescent current

VBO = 15 V

SD = IN = 5 V

-90

120

A

ILK

High-voltage leakage current

Vhvg = Vout = Vboot = 600 V

-

-

8

A

RDS(on)

Bootstrap diode on-resistance(2)

-

-

175

-



Output driving buffers

ISO

LVG, HVG

High/low-side source short-circuit

current

LVG/HVG ON

TJ = 25 °C

1.6

2

-

A

Full temperature range(3)

1.25

-

-

A

ISI

High/low-side sink short-circuit

current

LVG/HVG ON

TJ = 25 °C

22.5

-

A

Full temperature range(3)

1.55

-

-

A

Logic inputs

Vil

IN, SD vs.

SGND

Low level logic threshold voltage

-

0.95

-

1.45

V

Vih

High level logic threshold voltage

-

2

-

2.5

V

IINh

IN vs.

SGND

IN logic “1” input bias current

IN = 15 V

120

200

260

A

IINl

IN logic “0” input bias current

IN = 0 V

-

-

1

A

ISDh

SD vs.

SGND

SD logic “1” input bias current

SD = 15 V

-

-

1

A

ISDl

SD logic “0” input bias current

SD = 0 V

14

17

23

A