Electrical characteristics

L6494

8/18

DocID030317 Rev 2

RPU_SD

SD vs.

SGND

SD pull-up resistor

-

185

250

310

k



RPD_IN

IN vs.

SGND

IN pull-down resistor

-

58

75

125

k



Dynamic characteristics (see Figure 3 and Figure 4)

ton

SD vs.

LVG/HVG

High/low-side driver turn-on

propagation delay

VOUT = 0 V; VBOOT = VCC;

CL = 1 nF; Vi = 0 to 3.3 V

-

85

120

ns

toff

SD vs.

LVG/HVG;

IN vs.

LVG/HVG

High/low-side driver turn-off

propagation delay

-

85

120

ns

MT

-

Delay matching, HS and LS turn-

on/off(4)

--

-

30

ns

tr

LVG, HVG

Rise time

CL = 1 nF

-

25

-

ns

tf

Fall time

CL = 1 nF

-

25

-

ns

DT

-

Deadtime setting range(5)

RDT = 0 , CL = 1 nF,

0.26 0.40 0.54

s

RDT = 100 k, CL = 1 nF,

CDT = 100 nF

2.10 2.70 3.30

s

RDT = 200 k, CL = 1 nF,

CDT = 100 nF

4.00 5.00 6.00

s

MDT

-

Matching deadtime(5)

RDT = 0 , CL = 1 nF,

-

-

85

ns

RDT = 100 k, CL = 1 nF,

CDT = 100 nF

--

350

ns

RDT = 200 k, CL = 1 nF,

CDT = 100 nF

--

700

ns

1. VBO = VBOOT - VOUT.

2. RDSON is tested in the following way:

RDSON = [(VCC - VBOOT1) - (VCC - VBOOT2)] / [I1 (VCC, VBOOT1) - I2 (VCC, VBOOT2)]

where I1 is the BOOT pin current when VBOOT = VBOOT1, I2 when VBOOT = VBOOT2.

3. Characterized, not tested in production.

4. MT = max. (|ton (LVG) - toff (LVG)|, |ton (HVG) - toff (HVG)|, |toff (LVG) - ton (HVG)|, |toff (HVG) - ton (LVG)|).

5. MDT = | DTLH - DTHL | see Figure 4.

Table 5. Electrical characteristics (VCC = 15 V; TJ = +25 °C; PGND = SGND) (continued)

Symbol

Pin

Parameter

Test condition

Min. Typ. Max. Unit