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NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

DATA SHEET

Document No. D16135EJ3V0DS00 (3rd edition)

Date Published July 2006 NS CP(K)

Printed in Japan

2002

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

SILICON POWER TRANSISTOR

2SC2885, 2946, 2946(1)

The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small package (MP-3)

which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC converters and switching

regulators.

There are three types of transistors selectable according to the reliability requirments: 2SC2946 and 2946(1) for industrial

use, 2SC2885 for general use. The 2SC2946(1) is produced with leads so as to enable mounting directly in a hybrid IC.

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Collector to Base Voltage

VCBO

330

V

Collector to Emitter Voltage

VCEO

200

V

Emitter to Base Voltage

VEBO

7.0

V

Collector Current (DC)

IC(DC)

2.0

A

Collector Current (pulse)

Note

IC(pulse)

4.0

A

Base Current (DC)

IC(DC)

1.0

A

Total Power Dissipation

PT(TC = 25

°C)

15

W

Total Power Dissipation

PT(TA = 25

°C)

600

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Note PW

≤ 300

μs, Duty Cycle ≤ 10%