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2SC2885 データシート(PDF) 4 Page - Renesas Technology Corp

部品番号 2SC2885
部品情報  SILICON POWER TRANSISTOR
PDF  7 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC2885 データシート(HTML) 4 Page - Renesas Technology Corp

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Data Sheet D16135EJ3V0DS
2
2SC2885, 2946, 2946(1)
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC = 1.0 A, IB = 0.1 A, L = 500
μH*
200
V
Collector to emitter voltage
VCEX(SUS)
IC = 1.0 A, IB1 =
−IB2 = 0.1 A*
Ta = 125
°C, L = 180
μH, clamped
200
V
Collector cutoff current
ICBO
VCB = 250 V, IE = 0
10
μA
Collector cutoff current
ICEX1
VCE = 250 V, VBE(OFF) =
−1.5 V
10
μA
Collector cutoff current
ICEX2
VCE = 250 V, VBE(OFF) =
−1.5 V, Ta = 125°C
1.0
mA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
1.0
μA
hFE1
VCE = 5.0 V, IC = 0.1 A*
20
60
160
DC current gain
hFE2
VCE = 5.0 V, IC = 1.0 A*
15
Collector saturation voltage
VCE(sat)
IC = 1.0 A, IB = 0.1 A*
1.0
V
Base saturation voltage
VBE(sat)
IC = 1.0 A, IB = 0.1 A*
1.5
V
Turn-on time
ton
1.0
μs
Storage time
tstg
2.0
μs
Fall time
tf
IC = 1.0 A, RL = 100
Ω
IB1 =
−IB2 = 0.1 A, VCC ≅ 100 V
Refer to the test circuit.
1.0
μs
* Pulse test PW
≤ 350
μs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
N
M
L
K
hFE1
20 to 50
30 to 70
50 to 100
80 to 160
PACKAGE DRAWING (UNIT: mm)
<R>
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
0.5 ±0.1
2.3 ±0.2
0.5 ±0.1
Note
Note
0.15 ±0.15
2.3 ±0.3
2.3 ±0.3
2
13
6.5 ±0.2
5.0 ±0.2
4
2.3
2.3
0.5 ±0.1
2.3 ±0.2
1.1 ±0.2
0.5 −0.1
+0.2
0.5 −0.1
+0.2
2SC2946(1)
Electrode Connection
1. Base
2. Collector
3. Emitter
4. Collector Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
2SC2885, 2SC2946



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