Data Sheet PU10104EJ01V0DS

2

2SC5436

ELECTRICAL CHARACTERISTICS (TA = +25

°°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

–

–

100

nA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

–

–

100

nA

DC Current Gain

hFE

Note 1

VCE = 2 V, IC = 20 mA

70

–

130

–

Gain Bandwidth Product (1)

fT

VCE = 2 V, IC = 20 mA, f = 2 GHz

9.0

14.0

–

GHz

Gain Bandwidth Product (2)

fT

VCE = 1 V, IC = 10 mA, f = 2 GHz

7.0

12.0

–

GHz

Insertion Power Gain (1)

S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz

8.5

10.0

–

dB

Insertion Power Gain (2)

S21e2 VCE = 1 V, IC = 10 mA, f = 2 GHz

6.0

9.0

–

dB

Noise Figure (1)

NF

VCE = 2 V, IC = 3 mA, f = 2 GHz

–

1.4

2.0

dB

Noise Figure (2)

NF

VCE = 1 V, IC = 3 mA, f = 2 GHz

–

1.4

2.0

dB

Reverse Transfer Capacitance

Cre

Note 2

VCB = 2 V, IE = 0 mA, f = 1 MHz

–

0.4

0.8

pF

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

EB

FB

Marking

TN

TP

hFE Value

70 to 100

90 to 130