DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

NPN SILICON RF TRANSISTOR

2SC5507

NPN SILICON RF TRANSISTOR

FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

The mark

shows major revised points.

Document No. PU10522EJ01V0DS (1st edition)

(Previous No. P13864EJ1V0DS00)

Date Published September 2004 CP(K)

Printed in Japan

© NEC Compound Semiconductor Devices, Ltd. 1999, 2004

FEATURES

• Low noise and high gain with low collector current

• NF = 1.2 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz

• Maximum stable power gain: MSG = 22 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

• fT = 25 GHz technology adopted

• Flat-lead 4-pin thin-type super minimold (M04) package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5507

50 pcs (Non reel)

• 8 mm wide embossed taping

2SC5507-T2

3 kpcs/reel

• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25

°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

15

V

Collector to Emitter Voltage

VCEO

3.3

V

Emitter to Base Voltage

VEBO

1.5

V

Collector Current

IC

12

mA

Total Power Dissipation

Ptot

Note

39

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Free Air