Data Sheet PU10522EJ01V0DS

2

2SC5507

THERMAL RESISTANCE

Parameter

Symbol

Ratings

Unit

Junction to Case Resistance

Rth j-c

240

°C/W

Junction to Ambient Resistance

Rth j-a

650

°C/W

ELECTRICAL CHARACTERISTICS (TA = +25

°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

−

−

100

nA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

−

−

100

nA

DC Current Gain

hFE

Note 1

VCE = 2 V, IC = 5 mA

50

70

100

−

RF Characteristics

Gain Bandwidth Product

fT

VCE = 3 V, IC = 10 mA, f = 2 GHz

20

25

−

GHz

Insertion Power Gain

S21e2

VCE = 2 V, IC = 5 mA, f = 2 GHz

14

17

−

dB

Noise Figure

NF

VCE = 2 V, IC = 2 mA, f = 2 GHz,

ZS = Zopt

–

1.2

1.5

dB

Reverse Transfer Capacitance

Cre

Note 2

VCB = 2 V, IE = 0 mA, f = 1 MHz

−

0.08

0.12

pF

Maximum Stable Power Gain

MSG

Note 3

VCE = 2 V, IC = 5 mA, f = 2 GHz

−

22

−

dB

Gain 1 dB Compression Output Power

PO (1 dB)

VCE = 2 V, IC = 5 mA

Note 4, f = 2 GHz

−

5

−

dBm

3rd Order Intermodulation Distortion

Output Intercept Point

OIP3

VCE = 2 V, IC = 5 mA

Note 4, f = 2 GHz

−

15

−

dBm

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

3. MSG =

4. Collector current when PO (1 dB) is output

hFE CLASSIFICATION

Rank

FB

Marking

T78

hFE Value

50 to 100

S21

S12