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VIPERGAN50TR データシート(PDF) 21 Page - STMicroelectronics

部品番号 VIPERGAN50TR
部品情報  Advanced quasi-resonant offline high voltage converter with E-mode GaN HEMT
PDF  37 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VIPERGAN50TR データシート(HTML) 21 Page - STMicroelectronics

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RDELAY_default< RTB
NAUXNSEC∙ VOUT
VD−ONMIN −1
Dynamic blanking time and valley synchronization functions can be disabled connecting TB to GND.
The decision if the function is used or not is taken at power-up: before the pin VDD reaches the VDD-ON threshold,
the current ITB-DIS (200 µA typ.) is sourced from the pin. If the TB pin voltage is below the VTB-DIS threshold (100
mV typ.), the pin is assumed to be connected to GND, the related circuitry is disabled, and the information is
latched until the next power-on.
Please note that to ensure a correct check of the disabling function, the resistor
RDELAYcannotbelowerthan:
Equation 8
(8)
RDELAYmin <VTB−DISmax
ITB−DISmin =750 Ω
5.9
TB pin configuration
The pin TB can be easily configured in different combinations, as reported in Table 6 and in Figure 21, Figure 22,
Figure 23, Figure 24.
Table 6. TB pin matrix configuration
Dynamic Blanking Time
Valley Synchronization
Schematic Configuration
Yes
Yes
Figure 21
No
Yes
Figure 22
Yes
No
Figure 23
No
No
Figure 24
Figure 21. TB pin: (external configuration: dynamic
blanking time and valley synch)
Figure 22. TB pin: external configuration: (only
valley synch)
Figure 23. TB pin: external configuration (only
dynamic blanking time )
Figure 24. TB pin: external configuration (no
dynamic blanking time nor valley synch)
VIPERGAN50
TB pin configuration
DS13888 - Rev 2
page 21/37



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