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SPC58EN84C3RMSBY データシート(PDF) 40 Page - STMicroelectronics

部品番号 SPC58EN84C3RMSBY
部品情報  32-bit Power Architecture microcontroller for automotive ASIL-D applications
PDF  158 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SPC58EN84C3RMSBY データシート(HTML) 40 Page - STMicroelectronics

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Electrical characteristics
SPC584Nx, SPC58ENx, SPC58NNx
40/158
DS11734 Rev 6
IWPU
CC
P
Weak pull-up
current absolute
value
VIN =1.1 V(2)
VDD_HV =5.0 V ± 10%
130
μA
PVIN = 0.69 *
VDD_HV_IO(3)
VDD_HV =5.0 V ± 10%
15
IWPD
CC
P
Weak pull-down
current absolute
value
VIN = 0.69 *
VDD_HV_IO(2)
VDD_HV =5.0 V ± 10%
130
μA
PVIN =0.9 V
VDD_HV =5.0 V ± 10%
15
WFRST
CC
P
Input filtered
pulse
VDD_HV = 5.0 V ± 10%
500
ns
WNFRST
CC
P
Input not filtered
pulse
VDD_HV =5.0 V ± 10%
2000
ns
1. Iol_r applies to PORST: Strong Pull-down is active on PHASE0 for PORST. Refer to the device pinout IO definition excel file
for details regarding pin usage.
2. Maximum current when forcing a change in the pin level opposite to the pull configuration.
3. Minimum current when keeping the same pin level state than the pull configuration.
Table 18. Reset PAD electrical characteristics (continued)
Symbol
C
Parameter
Conditions
Value
Unit
Min
Typ
Max
Table 19. Reset Pad state during power-up and reset
PAD
POWER-UP State
RESET state
DEFAULT state(1)
PORST
Strong pull-down
Weak pull-down
Weak pull-down
ESR0
Strong pull-down
Strong pull-down
Weak pull-up
1. Before SW Configuration. Please refer to the Device Reference Manual, Reset Generation Module (MC_RGM) Functional
Description chapter for the details of the power-up phases.



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