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SPC584N84C3RMSBY データシート(PDF) 29 Page - STMicroelectronics

部品番号 SPC584N84C3RMSBY
部品情報  32-bit Power Architecture microcontroller for automotive ASIL-D applications
PDF  158 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SPC584N84C3RMSBY データシート(HTML) 29 Page - STMicroelectronics

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DS11734 Rev 6
29/158
SPC584Nx, SPC58ENx, SPC58NNx
Electrical characteristics
37
ILKG
CC
C
Pad input
leakage
STRONG pads
TJ =165 °C
1,500
nA
ILKG
CC
P
Pad input
leakage
VERY STRONG pads,
TJ =150 °C
1,000
nA
ILKG
CC
C
Pad input
leakage
VERY STRONG pads,
TJ =165 °C
2,000
nA
CP1
CC
D
Pad
capacitance
——
10
pF
Vdrift
CC
D
Input Vil/Vih
temperature
drift
In a 1 ms period, with a
temperature variation
<30 °C
——
100
mV
WFI
SR
C
Wakeup input
filtered pulse(4)
——
20
ns
WNFI
SR
C
Wakeup input
not filtered
pulse(4)
400
ns
1. Good approximation of the variation of the minimum value with supply is given by formula:
5 V range: VIHAUT =0.69×VDD_HV_IO; 3.3 V range: VIHAUT =0.75×VDD_HV_IO
2. Good approximation of the variation of the maximum value with supply is given by formula:
5 V range: VILAUT =0.49 × VDD_HV_IO; 3.3 V range: VILAUT =0.35 × VDD_HV_IO
3. Good approximation of the variation of the minimum value with supply is given by formula:
5 V and 3.3 V range: VHYSAUT =0.11 × VDD_HV_IO
4. In the range from WFI (max) to WNFI (min), pulses can be filtered or not filtered, according to operating temperature and
voltage. Refer to the device pinout IO definition excel file for the list of pins supporting the wakeup filter feature.
Table 11. I/O input electrical characteristics (continued)
Symbol
C
Parameter
Conditions
Value
Unit
Min
Typ
Max
Table 12. I/O pull-up/pull-down electrical characteristics
Symbol
C
Parameter
Conditions
Value
Unit
Min
Typ
Max
IWPU
CC
T
Weak pull-up
current
absolute value
VIN = 1.1 V(1)
——
130
μA
P
VIN = 0.69 *
VDD_HV_IO(2)
15
RWPU
CC
D
Weak Pull-up
resistance
VDD_HV_IO = 5.0 V ±
10%
33
93
K
Ω
IWPD
CC
T
Weak pull-
down current
absolute value
VIN = 0.69 *
VDD_HV_IO(1)
——
130
μA
P
VIN = 0.9 V(2)
15
RWPD
CC
D
Weak Pull-
down
resistance
VDD_HV_IO = 5.0 V ±
10%
29
60
K
Ω
1. Maximum current when forcing a change in the pin level opposite to the pull configuration.
2. Minimum current when keeping the same pin level state than the pull configuration.



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