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M5451 データシート(PDF) 6 Page - STMicroelectronics |
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M5451 データシート(HTML) 6 Page - STMicroelectronics |
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6 / 8 page ![]() POWER DISSIPATION OF THE IC The power dissipation of the IC can be limited using different configurations. a) In the application R must be chosen taking into account the worst operating conditions. VD VOUT R ID +V C a) R is determined by the maximum number of seg- ments activated R = VC − VD MAX − VO MIN NMAX ⋅ ID The worst case condition for the device is when roughly half of the maximum number of segments are activated. It must be checked that the total power dissipation does not exceed the absolute maximum ratings of the device. In critical cases more resistors can be used in conjunction with groups of segments. In this case the current variation in the single resistor is reduced and Ptot limited. b) In this configuration the drop on the serial con- +V C b) +VC VOUT +VD c) nected diodes is quite stable if the diodes are properly chosen. The total power dissipation of the IC depends, in a first approximation, only on the number of seg- ments activated. c) In this configuration VOUT + VD is constant. The total power dissipation of the IC depends only on the number of segments activated. M5450 - M5451 6/8 |
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