1996 Sep 10

2

Philips Semiconductors

Product specification

High-speed diode

BAS55

FEATURES

• Small plastic SMD package

• High switching speed: max. 6 ns

• Continuous reverse voltage:

max. 60 V

• Repetitive peak reverse voltage:

max. 60 V

• Repetitive peak forward current:

max. 600 mA.

APPLICATIONS

• High-speed switching in surface

mounted circuits.

DESCRIPTION

The BAS55 is a high-speed switching

diode fabricated in planar technology,

and encapsulated in the small

rectangular plastic SMD SOT23

package.

PINNING

PIN

DESCRIPTION

1

anode

2

not connected

3

cathode

Fig.1 Simplified outline (SOT23) and symbol.

Marking code: L5p.

handbook, halfpage

21

3

MAM185

2

n.c.

1

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

repetitive peak reverse voltage

−

60

V

continuous reverse voltage

−

60

V

continuous forward current

see Fig.2; note 1

−

250

mA

repetitive peak forward current

−

600

mA

non-repetitive peak forward current

surge; see Fig.4

t=1

µs

−

9A

t = 100

µs

−

3A

t = 10 ms

−

1.7

A

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C