3

1

2

4

6

5

Dual Enhancement Mode Field Effect Transistor (P Channel)

CEH2637A

FEATURES

-20V, -3.3A, RDS(ON) = 65mW

@VGS = -4.5V.

RDS(ON) = 100mW @VGS = -2.5V.

High dense cell design for extremely low RDS(ON).

Rugged and reliable.

TSOP-6 package.

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation

VDS

VGS

ID

PD

IDM

-20

1.14

-13.2

-3.3

±12

V

W

A

A

V

1

TSOP-6

RoHS compliant.

http://www.cet-mos.com

Rev 1

2021.Nov

Details are subject to change without notice .

G1(1)

G2(3)

S1(5)

D1(6)

S2(2)

D2(4)

RDS(ON) = 150mW @VGS = -1.8V.

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient b

Parameter

Symbol

Limit

Units

C/W

110

RqJA