| データシートサーチシステム |
|
JS28F640J3F75 データシート(PDF) 33 Page - Numonyx B.V |
|
|
|||||||||||||||||||||||||||||
JS28F640J3F75 データシート(HTML) 33 Page - Numonyx B.V |
|
33 / 67 page ![]() Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) Datasheet 32 8.1.2 Output Disable With CEx asserted, and OE# at a logic-high level (VIH), the device outputs are disabled. Output signals DQ[15:0] are placed in a high-impedance state. 8.2 Bus Writes Writing or Programming to the device, is where the host writes information or data into the flash device for non-volatile storage. When the flash device is programmed, ‘ones’ are changed to ‘zeros’. ‘Zeros’ cannot be programed back to ‘ones’. To do so, an erase operation must be performed. Writing commands to the Command User Interface (CUI) enables various modes of operation, including the following: • Reading of array data • Common Flash Interface (CFI) data • Identifier codes, inspection, and clearing of the Status Register • Block Erasure, Program, and Lock-bit Configuration (when VPEN = VPENH) Erasing is performed on a block basis – all flash cells within a block are erased together. Any information or data previously stored in the block will be lost. Erasing is typically done prior to programming. The Block Erase command requires appropriate command data and an address within the block to be erased. The Byte/Word Program command requires the command and address of the location to be written. Set Block Lock-Bit commands require the command and block within the device to be locked. The Clear Block Lock-Bits command requires the command and address within the device to be cleared. The CUI does not occupy an addressable memory location. It is written when the device is enabled and WE# is active. The address and data needed to execute a command are latched on the rising edge of WE# or CEX (CEX low is defined as the combination of pins CE0, CE1, and CE2 that enable the device. CEX high is defined as the combination of pins CE0, CE1, and CE2 that disable the device. See Table 17 on page 30). Standard microprocessor write timings are used. Table 18: Enhanced Configuration Register Reserved Page Length Reserved ECR 15 ECR 14 ECR 13 ECR 12 ECR 11 ECR 10 ECR 9 ECR 8 ECR 7 ECR 6 ECR 5 ECR 4 ECR 3 ECR 2 ECR 1 ECR 0 BITS DESCRIPTION NOTES ECR[15:14] RFU All bits should be set to 0. ECR.13 • “1” = 8-Word Page mode • “0” = 8-Word Page mode (Default) Either “1” or “0” is for 8-word sense in page mode. ECR[12:0] RFU All bits should be set to 0. Table 19: Asynchronous 8-Word Page Mode Command Bus-Cycle Definition Command Bus Cycles Required First Bus Cycle Second Bus Cycle Oper Addr(1) Data Oper Addr(1) Data Set Enhanced Configuration Register (Set ECR) 2 Write ECD 0060h Write ECD 0004h 1. ECD = Enhanced Configuration Register Data |
|
リンク URL |
| ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | データシートへのリンク | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |