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STR91XF データシート(PDF) 54 Page - STMicroelectronics |
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STR91XF データシート(HTML) 54 Page - STMicroelectronics |
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54 / 72 page  Electrical characteristics STR91xF 54/72 6.10 Flash memory characteristics VDDQ = 2.7 - 3.6V, VDD = 1.65 - 2V, TA = -40 / 85 °C unless otherwise specified. Table 14. Flash memory program/erase characteristics Notes: 1 STR91xFx44 devices have 512 Kbytes primary Flash, STR91xFx32 devices have 256 Kbytes primary Flash 2VDD = 1.8V, VDDQ = 3.3V, TA = 25°C. Table 15. Flash memory endurance Parameter Test Conditions Value Unit Typ2) Typ after 100K W/E cycles2) Max Bank erase Primary Bank (512 Kbytes)1) 7TBD TBD s Primary Bank (256 Kbytes)1) 4TBD TBD s Secondary Bank (32 Kbytes) 700 TBD TBD ms Sector erase Of Primary Bank (64 Kbytes) 1200 TBD TBD ms Of Secondary Bank (8 Kbytes) 300 TBD TBD ms Bank program Primary Bank (512 Kbytes)1) 3700 TBD TBD ms Primary Bank (256 Kbytes)1) 1900 TBD TBD ms Secondary Bank (32 Kbytes) 250 TBD TBD ms Sector program Of Primary Bank (64 Kbytes) 600 TBD TBD ms Of Secondary Bank (8 Kbytes) 60 TBD TBD ms Word program 8 TBD TBD µs Sector erase timeout TBD µs Parameter Test Conditions Value Unit Min Typ Max Program/erase cycles Per word 100K cycles Data retention 20 years |
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