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CS44130 データシート(PDF) 9 Page - Cirrus Logic |
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CS44130 データシート(HTML) 9 Page - Cirrus Logic |
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9 / 23 page ![]() DS690PP1 9 CS44130 PWM OUTPUT CHARACTERISTICS (Unless otherwise noted: GND/PGND = 0 V, all voltages with respect to ground, VP = 21 V, RL = 8 Ω in Full-Bridge Mode, RL = 4 Ω in Half-Bridge Mode, PWM Switch Rate = 384 kHz, Modulation Index = 0.88; Measurement band- width is 10 Hz to 20 kHz; Performance measurements taken with a full scale 997 Hz and AES17 filter.) DIGITAL INTERFACE CHARACTERISTICS (GND/PGND = 0 V, all voltages with respect to ground) Parameters Symbol Conditions Min Typ Max Units Power Output per Channel Half-Bridge Full-Bridge Parallel Full-Bridge PO THD+N =10% THD+N =1% THD+N = 10% THD+N = 1% THD+N = 10% THD+N = 1% - - - - - - 15 11 30 20 60 40 - - - - - - W Total Harmonic Distortion + Noise Half-Bridge Full-Bridge Parallel Full-Bridge THD+N PO = 1 W PO =7.8 W (0 dBFS) PO = 1 W PO = 15.9 W (0 dBFS) PO = 1 W PO = 30.8 W (0 dBFS) - - - - - - .20 .35 .12 .19 .14 .29 - - - - - - % Dynamic Range Half-Bridge Full-Bridge Parallel Full-Bridge DR PO = -60 dBFS, A-Weighted PO = -60 dBFS, Unweighted PO = -60 dBFS, A-Weighted PO = -60 dBFS, Unweighted PO = -60 dBFS, A-Weighted PO = -60 dBFS, Unweighted - - - - - - 102 99 107 105 102 99 - - - - - - dB MOSFET On Resistance RDS(ON) Id = 1 A, TA = 25°C- 450 550 m Ω Efficiency (Full Bridge) h0 dBFS PO = 2 x 24 W - 90 - % Minimum Output Pulse Width PWmin No Load - 60 - ns Rise Time of OUTx tr Resistive Load - 20 - ns Fall Time of OUTx tf Resistive Load - 20 - ns Junction Thermal Warning Trip Point TTW -125 - °C Junction Overtemperature Trip Point TOT -150 - °C VP Under-voltage Trip Point VUV TA = 25°C- 6 - V Ramp Up Time (Half-Bridge Mode) TRU DC Blocking Cap = 1000 µF - 1.5 - s Ramp Down Time (Half-Bridge Mode) TRD DC Blocking Cap = 1000 µF - 50 - s Parameters Symbol Min Typ Max Units High-Level Input Voltage (% of VL) VIH 70% - - V Low-Level Input Voltage (% of VL) VIL -- 30% V Low-Level Output Voltage at Io=2 mA (% of VL) VOL -- 20% V Input Leakage Current Iin -- ±10 µA Input Capacitance -- 8 pF |
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