PIMC31_1

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 01 — 24 March 2009

4 of 13

NXP Semiconductors

PIMC31

500 mA, 50 V NPN/PNP double RET; R1 = 1 k

Ω, R2 = 10 kΩ

7.

Characteristics

FR4 PCB, standard footprint

Fig 2.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aaa494

10−5

10

10−2

10−4

102

10−1

tp (s)

10−3

103

1

102

10

103

Zth(j-a)

(K/W)

1

0.10

0.05

0.02

0.01

0

δ = 1

0.75

0.50

0.33

0.20

Table 7.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity

ICBO

collector-base cut-off

current

VCB =50V; IE = 0 A

-

-

100

nA

ICEO

collector-emitter

cut-off current

VCE =50V; IB = 0 A

-

-

0.5

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC = 0 A

-

-

0.72

mA

hFE

DC current gain

VCE =5V; IC =50mA

70

-

-

VCEsat

collector-emitter

saturation voltage

IC = 50 mA; IB = 2.5 mA

-

-

0.3

V

VI(off)

off-state input voltage

VCE =5V; IC = 100 µA

0.3

0.6

1

V

VI(on)

on-state input voltage

VCE = 0.3 V; IC = 20 mA

0.4

0.8

1.4

V

R1

bias resistor 1 (input)

0.7

1

1.3

k

Ω

R2/R1

bias resistor ratio

9

10

11

Cc

collector capacitance

VCB =10V; IE =ie =0A;

f=1MHz

TR1 (NPN)

-

7

-

pF

TR2 (PNP)

-

11

-

pF