µPC813

R03DS0149EJ0100 Rev.1.00

Page 3 of 7

2019.06.13

ELECTRICAL CHARACTERISTICS (TA = 25

C, V ± = ±15 V)

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITION

Input Offset Voltage

VIO

±1

±2.5

mV

RS ≦ 50 Ω

Input Offset Current Note 7

IIO

±25

±100

pA

Input Bias Current Note 7

IB

50

200

pA

Large Signal Voltage Gain

AV

25000

200000

RL ≧ 2 kΩ, VO = ±10 V

Circuit Current

ICC

2.5

3.4

mA

IO = 0 A

Common Mode Rejection Ratio CMR

70

100

dB

Supply Voltage Rejection Ratio

SVR

70

100

dB

Output Voltage Swing

Vom

±12

+14.0

-13.3

V

RL ≧ 10 kΩ

Output Voltage Swing

Vom

±10

+13.5

-12.8

V

RL ≧ 2 kΩ

Common Mode Input Voltage

Range

VICM

±11

+14

-12

V

Slew Rate

SR

25

V/μs

AV = 1

Unity Gain Frequency

funity

6

MHz

Input Equivalent Noise Voltage

Density

en

19

nV/ Hz

RS = 100 Ω, f = 1 kHz

Input Offset Voltage

VIO

±5

mV

RS ≦ 50 Ω, TA = -20 ~ +70

C

Average VIO Temperature Drift

ΔVIO/ΔT

±7

μV/

C

TA = -20 ~ +70

C

Input Offset Current Note 7

IIO

±2

nA

TA = -20 ~ +70

C

Input Bias Current Note 7

IB

7

nA

TA = -20 ~ +70

C

【

Note】7. The direction of the input bias current is the same direction that flows into the IC because the first stage is

composed of Pch J-FET. When TJ = 25

C or higher, it increases exponentially with increase in temperature

(please see IB - TA characteristics). During measurement, please kindly take care of TJ

≒ TA

Caution

Since µPC813 has high input impedance characteristics, please be careful of insulation between the

terminals on the board