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UPD78P014 データシート(PDF) 28 Page - Renesas Technology Corp

部品番号 UPD78P014
部品情報  MOS INTEGRATED CIRCUIT
PDF  64 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPD78P014 データシート(HTML) 28 Page - Renesas Technology Corp

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µPD78P014
Subsystem Clock Oscillator Characteristics (Ta = –40 to +85
°C, VDD = 2.7 to 6.0 V)
MIN.
TYP.
MAX.
Unit
32
32.768
35
kHz
1.2
2
s
10
32
100
kHz
515
µs
Recommended
Circuit
Parameter
Oscillation frequency
(fXT)Note 1
Oscillation stabiliza-
tion timeNote 2
XT1 input frequency
(fXT)Note 1
XT1 input high-/low-
level width (tXTH/tXTL)
Resonator
Crystal
resonator
External clock
Notes 1. Only the oscillator characteristics are shown. Refer to AC characteristics for instruction execution times.
2. Time required to stabilize oscillation after VDD reaches MIN. of oscillation voltage range.
Cautions 1. When the subsystem clock oscillator is used, the following should be noted concerning wiring in the
area in the figure enclosed by a dotted line to prevent the influence of wiring capacitance, etc.
• The wiring should be kept as short as possible.
• No other signal lines should be crossed.
• Keep away from lines carrying a high fluctuating current.
• The oscillator capacitor grounding point should always be at the same potential as VSS.
• Do not connect to a ground pattern carrying a high current.
• A signal should not be taken from the oscillator.
2. The subsystem clock oscillator is a circuit with a low amplification level, more prone to misoperation
due to noise than the main system clock. When using the subsystem clock, special care is needed
regarding the wiring method.
Test Conditions
VDD = 4.5 to 6.0 V
XT1 XT2
C3
C4
R2
Vss
XT1 XT2



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