MCP16331 datasheet(4/48 Pages) MICROCHIP

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MCP16331

DS20005308D-page 4

 2014-2021 Microchip Technology Inc.

EN Input Logic High

VIH

1.9

—

EN Input Logic Low

VIL

—

0.4

EN Input Leakage Current

IENLK

—

0.007

0.5

µA

VIN = EN = 5V

Soft Start Time

tSS

—

600

—

µs

EN Low-to-high,



90% of VOUT

Thermal Shutdown Die

Temperature

TSD

—

160

—

C

Note 3

Die Temperature Hysteresis

TSDHYS

—

C

Note 3

DC CHARACTERISTICS (CONTINUED)

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VIN = VEN = 12V, VBOOST – VSW = 3.3V, 

VOUT = 3.3V, IOUT = 100 mA, L = 15 µH, COUT = CIN = 2 x 10 µF X7R Ceramic Capacitors.

Boldface specifications apply over the TA range of -40°C to +125°C.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Note 1:

The input voltage should be > output voltage + headroom voltage; higher load currents increase the input

voltage necessary for regulation. See characterization graphs for typical input to output operating voltage

range.

VBOOST supply is derived from VOUT.

Determined by characterization, not production tested.

This is ensured by design.

TEMPERATURE SPECIFICATIONS

Electrical Specifications

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges

Operating Junction Temperature Range

-40

—

+125

°C

Steady State

Storage Temperature Range

-65

—

+150

°C

Maximum Junction Temperature

—

+160

°C

Transient

Package Thermal Resistances

Thermal Resistance, 6L-SOT-23

JA

—

190.5

—

°C/W

EIA/JESD51-3 Standard

Thermal Resistance, 8L-2 mm x 3 mm

TDFN

JA

—

52.5

—

°C/W

EIA/JESD51-3 Standard

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