BU4525DF datasheet(1/4 Pages) PHILIPS

部品番号	BU4525DF

部品情報	Silicon Diffused Power Transistor

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メーカー	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Objective specification

Silicon Diffused Power Transistor

BU4525DF

GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack

envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television receivers

and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a

very low worst case dissipation.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

BE = 0 V

-

1500

V

CEO

Collector-emitter voltage (open base)

-

800

V

I

C

Collector current (DC)

-

12

A

I

CM

Collector current peak value

-

30

A

P

tot

Total power dissipation

T

hs ≤ 25 ˚C

-

45

W

V

CEsat

Collector-emitter saturation voltage

I

C = 9.0 A; IB = 2.25 A

-

3.0

V

I

Csat

Collector saturation current

f = 16 kHz

9.0

-

A

f = 70 kHz

t.b.f

-

A

V

F

Diode forward voltage

I

F = 9.0 A

-

2.2

V

t

f

Fall time

I

Csat = 9.0 A;f = 16 kHz

0.4

0.55

µs

f = 70 kHz

t.b.f

µs

PINNING - SOT199

PIN CONFIGURATION

SYMBOL

DESCRIPTION

1

base

2

collector

3

emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

BE = 0 V

-

1500

V

CEO

Collector-emitter voltage (open base)

-

800

V

I

C

Collector current (DC)

-

12

A

I

CM

Collector current peak value

-

30

A

I

B

Base current (DC)

-

8

A

I

BM

Base current peak value

-

12

A

-I

BM

Reverse base current peak value

1

-7

A

P

tot

Total power dissipation

T

hs ≤

25 ˚C

-

45

W

T

stg

Storage temperature

-55

150

˚C

T

j

Junction temperature

-

150

˚C

12

3

case

b

c

e

Rbe

1 Turn-off current.

July 1998

1

Rev 1.000

同様の部品番号 - BU4525DF

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NXP Semiconductors	BU4525DL	20Kb / 4P	Silicon Diffused Power Transistor July 1998 Rev 1.000
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