Philips Semiconductors

Objective specification

Silicon Diffused Power Transistor

BU4525DF

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-hs

Junction to heatsink

with heatsink compound

-

2.8

K/W

R

th j-a

Junction to ambient

in free air

35

-

K/W

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

Repetitive peak voltage from all

R.H.

≤ 65 % ; clean and dustfree

-

-

2500

V

three terminals to external

heatsink

C

isol

Capacitance from T2 to external f = 1 MHz

-

22

-

pF

heatsink

STATIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES

Collector cut-off current

2

V

-

-

1.0

mA

I

CES

V

-

-

2.0

mA

T

BV

EBO

Emitter-base breakdown voltage

I

7.5

13.5

-

V

R

be

Base-emitter resistance

V

-

50

-

Ω

V

CEOsust

Collector-emitter sustaining voltage

I

800

-

-

V

L = 25 mH

V

CEsat

Collector-emitter saturation voltage

I

-

-

3.0

V

V

BEsat

Base-emitter saturation voltage

I

0.96

1.01

1.06

V

h

FE

DC current gain

I

-

t.b.f

-

h

FE

I

4.2

5.8

7.6

V

F

Diode forward voltage

I

-

2.2

V

DYNAMIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

C

c

Collector capacitance

I

145

-

pF

Switching times (16 kHz line

I

deflection circuit)

(I

t

s

Turn-off storage time

3.7

4.5

µs

t

f

Turn-off fall time

0.4

0.55

µs

Switching times (70 kHz line

I

deflection circuit)

t

s

Turn-off storage time

t.b.f

t.b.f

µs

t

f

Turn-off fall time

t.b.f

t.b.f

µs

2 Measured with half sine-wave voltage (curve tracer).

July 1998

2

Rev 1.000