Electrical characteristics

RHR61, RHR64

Table 5: VCC+ = 3.3 V, VCC- = 0 V, Vicm = 1.65 V, Tamb = 25 °C, and load (RL) connected to

1.65 V (unless otherwise specified)

Symbol

Parameter

Conditions

Min.

Typ

.

Max.

Unit

DC performance

Vio

Offset voltage

1

mV

-55 °C < Tamb < 125 °C

3

DVio

Input offset voltage drift

4

μV/°C

Iio

Input offset current

1

70

pA

-55 °C < Tamb < 125 °C

1

150

Iib

Input bias current

1

70

-55 °C < Tamb < 125 °C

1

150

CMR

Common mode rejection ratio

20 log (ΔVic/ΔVio)

0 V to 1.65 V, Vout = 1.65 V

75

79

dB

-55 °C < Tamb < 125 °C

72

0 V to 3.3 V, Vout = 1.65 V

60

-55 °C < Tamb < 125 °C

56

Avd

Large signal voltage gain

RL

= 10 kΩ, Vout = 0.5 V to 2.8 V

87

98

-55 °C < Tamb < 125 °C

82

VOH

High-level output voltage

RL = 10

kΩ

35

6

mV

-55 °C < Tamb < 125 °C

50

VOL

Low-level output voltage

RL =

10 kΩ

7

35

-55 °C < Tamb < 125 °C

50

Iout

Isink

Vο = 3.3 V

30

45

mA

-55 °C < Tamb < 125 °C

25

Isource

Vο = 0 V

-45

-30

-55 °C < Tamb < 125 °C

-25

ICC

Supply current (per channel)

No load, Vout = 1.75 V

55

64

µA

-55 °C < Tamb < 125 °C

66

AC performance

GBP

Gain bandwidth product

RL

= 2 kΩ, CL = 100 pF

610

820

kHz

-55 °C < Tamb < 125 °C

310

ɸm

Phase margin

RL =

2 kΩ, CL = 100 pF

50

Degrees

Gm

Gain margin

RL =

2 kΩ, CL = 100 pF

11

dB

SR

Slew rate

VIN = 0.5 V to VCC -0.5V, 10 % to

90 %, RL =

2 kΩ, CL = 100 pF, Av

= 1

0.22

0.2

9

V/μs

-55 °C < Tamb < 125 °C

0.17

en

Equivalent input noise voltage

f = 1 kHz

65

nV/√Hz

f = 10 kHz

50

6/20

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