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BUT18 データシート(PDF) 2 Page - NXP Semiconductors

部品番号 BUT18
部品情報  Silicon diffused power transistors
PDF  12 Pages
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メーカー  PHILIPS [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUT18 データシート(HTML) 2 Page - NXP Semiconductors

  BUT18 Datasheet HTML 1Page - NXP Semiconductors BUT18 Datasheet HTML 2Page - NXP Semiconductors BUT18 Datasheet HTML 3Page - NXP Semiconductors BUT18 Datasheet HTML 4Page - NXP Semiconductors BUT18 Datasheet HTML 5Page - NXP Semiconductors BUT18 Datasheet HTML 6Page - NXP Semiconductors BUT18 Datasheet HTML 7Page - NXP Semiconductors BUT18 Datasheet HTML 8Page - NXP Semiconductors BUT18 Datasheet HTML 9Page - NXP Semiconductors Next Button
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1999 Jun 11
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18; BUT18A
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a TO-220AB package.
APPLICATIONS
• Converters
• Inverters
• Switching regulators
• Motor control systems.
PINNING
PIN
DESCRIPTION
1
base
2
collector; connected to
mounting base
3
emitter
Fig.1 Simplified outline (TO-220AB) and symbol.
dbook, halfpage
MBK106
12 3
3
2
1
MBB008
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VCESM
collector-emitter peak voltage
VBE =0
BUT18
850
V
BUT18A
1000
V
VCEO
collector-emitter voltage
open base
BUT18
400
V
BUT18A
450
V
VCEsat
collector-emitter saturation voltage
see Fig.7
1.5
V
ICsat
collector saturation current
4
A
IC
collector current (DC)
see Fig.2
6
A
ICM
collector current (peak value)
see Fig.2
12
A
Ptot
total power dissipation
Tmb ≤ 25 °C; see Fig.4
110
W
tf
fall time
resistive load; see Figs 10 and 11
0.8
µs
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base
1.15
K/W



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