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BUT18 データシート(PDF) 3 Page - NXP Semiconductors |
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BUT18 データシート(HTML) 3 Page - NXP Semiconductors |
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3 / 12 page  1999 Jun 11 3 Philips Semiconductors Product specification Silicon diffused power transistors BUT18; BUT18A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. Measured with a half-sinewave voltage (curve tracer). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM collector-emitter peak voltage VBE =0 BUT18 − 850 V BUT18A − 1000 V VCEO collector-emitter voltage open base BUT18 − 400 V BUT18A − 450 V ICsat collector saturation current − 4A IC collector current (DC) see Fig.2 − 6A ICM collector current (peak value) see Fig.2 − 12 A IB base current (DC) − 3A IBM base current (peak value) − 6A Ptot total power dissipation Tmb ≤ 25 °C; see Fig.4 − 110 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCEOsust collector-emitter sustaining voltage IC = 0.1 A; IBoff = 0; L = 25 mH; see Figs 5 and 6 BUT18 400 −− V BUT18A 450 −− V VCEsat collector-emitter saturation voltage IC = 4 A; IB = 0.8 A; see Fig.7 −− 1.5 V VBEsat base-emitter saturation voltage IC = 4 A; IB = 0.8 A; see Fig.8 −− 1.3 V ICES collector-emitter cut-off current VCE =VCESMmax; VBE = 0; note 1 −− 1mA VCE =VCESMmax; VBE =0; Tj = 125 °C; note 1 −− 2mA IEBO emitter-base cut-off current VEB =9V; IC =0 −− 10 mA hFE DC current gain VCE =5V; IC = 10 mA; see Fig.9 10 18 35 VCE =5V; IC = 1 A; see Fig.9 10 20 35 Switching times resistive load (see Figs 10 and 11) ton turn-on time ICon = 4 A; IBon = −IBoff = 800 mA −− 1 µs ts storage time ICon = 4 A; IBon = −IBoff = 800 mA −− 4 µs tf fall time ICon = 4 A; IBon = −IBoff = 800 mA −− 0.8 µs Switching times inductive load (see Figs 10 and 13) ts storage time ICon = 4 A; IBon = 800 mA; VCL = 250 V − 1.6 2.5 µs tf fall time ICon = 4 A; IBon = 800 mA; VCL = 250 V − 150 400 ns |
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