13NM60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 9

www.unisonic.com.tw

QW-R209-076.N



ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

600

V

Gate-Source Voltage

VGSS

±30

V

Continuous

ID

13

A

Drain Current

Pulsed (Note 2)

IDM

39

A

Avalanche Current (Note 2)

IAR

2.4

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

452

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220/TO-262/TO-263

120

W

TO-220F/TO-220F1

TO-220F2/TO-220WF

30

W

Power Dissipation

TO-251/TO-252

PD

60

W

Junction Temperature

TJ

+150

°C

Storage Temperature Range

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature.

3. L=157mH, IAS=2.4A, VDD= 50V, RG=25Ω, Starting TJ=25°C

4. ISD ≤13A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220/TO-220F

TO-220F1/TO-220F2

TO-220WF/TO-262

TO-263

62.5

°С/W

Junction to Ambient

TO-251/TO-252

θJA

110

°С/W

TO-220/TO-262/TO-263

1.04

°С/W

TO-220F/TO-220F1

TO-220WF/TO-220F2

4.2

°С/W

Junction to Case

TO-251/TO-252 (Note)

θJC

2.08

°С/W

Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.