13NM60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 9

www.unisonic.com.tw

QW-R209-076.N



ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

600

V

Drain-Source Leakage Current

IDSS

VDS = 600V, VGS = 0V

10

μA

Forward

VGS = 30V, VDS = 0V

100

nA

Gate-Source Leakage Current

Reverse

IGSS

VGS = -30V, VDS = 0V

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

2.5

4.5

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10V, ID = 6.5A

0.45

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

760

pF

Output Capacitance

COSS

600

pF

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=25V, f=1.0MHz

65

pF

Gate Resistance

RG

VDS =0V, VGS =0V, f =1MHz

1.185

Ω

SWITCHING CHARACTERISTICS

Total Gate Charge (Note 1)

QG

28.5

nC

Gate to Source Charge

QGS

4.5

nC

Gate to Drain Charge

QGD

VDS=480V, VGS=10V, ID=13A,

IG=1mA (Note 1,2)

10

nC

Turn-ON Delay Time (Note 1)

tD(ON)

10

nS

Rise Time

tR

24

nS

Turn-OFF Delay Time

tD(OFF)

80

nS

Fall-Time

tF

VDD =100V, ID =13A, RG =25Ω,

VGS=10V (Note 1,2)

47

nS

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

13

A

Maximum Body-Diode Pulsed Current

ISM

39

A

Drain-Source Diode Forward Voltage (Note 1)

VSD

IS =13A, VGS=0V

1.4

V

Body Diode Reverse Recovery Time (Note 1)

trr

370

nS

Body Diode Reverse Recovery Charge

Qrr

IS =13A, VGS=0V,

dIF/dt=100A/μs

5.4

μC

Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating ambient temperature.