ISBL3019N

eq 2SC5200

isc Silicon NPN Power Transistor

www.iscsemi.com

2023-9-20

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

VCBO

Collector-Base Breakdown Voltage

IC=5mA; IE= 0

300

--

--

V

VCEO

Collector-Emitter Breakdown Voltage

IC=10mA; IB= 0

300

--

--

V

VEBO

Emitter-Base Breakdown Voltage

IE=5mA; IC= 0

5

--

--

V

ICBO

Collector Cut-off Current

VCB = 250V; IE= 0

--

--

5.0

uA

IEBO

Emitter Cutoff Current

VEB = 5V; IC= 0

--

--

5.0

uA

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 8A; IB= 0.8A

--

0.4

3.0

V

VBE(on)

Base-Emitter Turn-On Voltage

VCE= 5V;IC= 7A;

--

1.0

1.5

V

hFE

DC Current Gain

VCE= 5V;IC= 1A

55

--

160

hFE

DC Current Gain

VCE= 5V;IC=7A;

35

60

--



hFE Classifications

R

O

55-110

80-160

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ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for

use in equipment which require specialized quality and/or reliability, or in equipment which could have

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intend our products to be used in these special applications.

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