2SC5200 datasheet(1/2 Pages) ISC

部品番号	2SC5200

部品情報	isc Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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ISBL3019N

eq 2SC5200

isc Silicon NPN Power Transistor

www.iscsemi.com

2023-9-20

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage

-V(BR)CEO=300V(Min)

·

Collector-Emitter Saturation Voltage

-VCE(sat)= 3.0V(Max) @IC= 8A

APPLICATIONS

·

Designed for power amplifier,high speed switching and

regulated power supply applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

300

V

VCEO

Collector-Emitter Voltage

300

V

VEBO

Emitter-Base Voltage

5

V

ICM

Collector Current-Continuous

25

A

IB

Base Current

1.5

A

PCM

Collector Power Dissipation

250

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.5

℃

/W

同様の部品番号 - 2SC5200

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