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TN22 データシート(PDF) 5 Page - STMicroelectronics |
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TN22 データシート(HTML) 5 Page - STMicroelectronics |
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5 / 9 page ![]() TN22 5/9 ® Figure 12: Ordering information scheme Figure 8: Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp = 10ms, and corresponding value fo I2t Figure 9: On-state characteristics (maximum values) I(A). I2 t(A2 s) TSM Tj initial = 25 C o I TSM tp(ms) I 2 t 100 10 10 1 1 0.1 110 20 0 1 2 3 4 5 6 7 8 V(V) TM I(A) TM Tj=25 C o Tj=110 C o Tj=110 C Vto =2.50V Rt =0.235 o Figure 10: Relative variation of holding current versus gate-cathode resistance (typical val- ues) Figure 11: Maximum allowable RMS current versus time conduction and initial case tempera- ture. Note: Calculation made fot Tj max = 135°C (the failure mode will be short circuit) 1 10 100 1000 1 10 100 500 Rgk( ) I(mA) H Tj=25 C o I(A) T(rms) tp(s) 0.1 1 10 100 11 10 9 8 7 6 5 4 3 2 1 Tc initial = 25 C o Tc initial = 45 C o Tc initial = 65 C o TN 2 2 - 1500 B (-TR) STARTLIGHT DEVICE I MAX 2: 1.5 mA GT V max: 1500: 1500V BR I MAX 2: 2 A T(RMS) PACKAGE: B: DPAK H: IPAK T: TO-220AB PACKING MODE: Blank: Tube -TR: DPAK Tape & Reel |
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