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COMSET SEMICONDUCTORS
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ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
VCE= VCESM= 1500 V , VBE= 0
--
1
ICES
Collector Cutoff Current
VCE= VCESM= 1500 V , VBE= 0 ,Tj =125°C
--
2
mA
VCE0(SUS)
Collector-Emitter
Sustaining Voltage
IC=0.1A , IB=0, L=25mH
700
-
-
V
IEBO
Emitter Cutoff Current
VEB=6.0 V, IC=0
--
10
mA
VCE(SAT)
Collector-Emitter
saturation Voltage
IC=4.5A , IB=2 A
--
1.0
VBE(SAT)
Base-Emitter saturation
Voltage
IC=4.5 A , IB=2 A
--
1.3
V
VF
Forward Voltage
IF=4.5 A
-1.6
2
V
HFE
DC Current Gain
IC=100 mA , VCE=5.0 V
513
30
-
fT
Transition frequency
VCE=5 V , IC=0.1 A, f=5MHz
-7
-
MHz
Cc
Collector capacitance
IE= ie= 0, VCB=10 V, f=1 MHz
-
125
-
pF
ts
Storage Time
-
6.5
-
tf
Fall Time
-VIM= 4V, LB= 6µH
IC=ICsat, IB= 1.4A(-dIB/dt= 0.6A/µs)
-0.7
-
µs
MECHANICAL DATA CASE SOT199
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
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