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COMSET SEMICONDUCTORS
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NPN BU508DF
The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for
the BU508DF).
They are a high voltage, high speed switching and they are intended for use in horizontal deflexion
circuits of colour television receivers.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCEO
Collector-Emitter Voltage
IB = 0
700
V
VCESM
Collector-Emitter Voltage
VBE = 0
1500
V
IC
Collector Current
8A
ICM
Collector Peak Current
15
A
IB
Base Current
4A
ICsat
Collector Current saturation
4.5
A
IBM
Base Peak Current
6A
Pt
Total Power Dissipation
@ TC = 25°
34
Watts
TJ
Junction Temperature
150
°C
TStg
Storage Temperature
-65 to +150
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-mb
Thermal Resistance, Junction to Mounting Base
1.0
K/W
RthJ-h
Thermal Resistance, Junction to Hexternal Heatsink
3.7
K/W
RthJ-h
Thermal Resistance, Junction to Hexternal Heatsink
2.8
K/W
RthJ-a
Thermal Resistance, Junction to Ambient
35
K/W
ISOLATION
Symbol
Ratings
Value
Unit
VISOL
Isolation Voltage from all terminals to external
heatsink (peak value)
1500
V
CISOL
Isolation capacitance from collector to external
heatsink
Typ.
21
pF
S
SIIL
LIIC
CO
ON
N D
DIIF
FF
FU
US
SE
ED
D P
PO
OW
WE
ER
R T
TR
RA
AN
NS
SIIS
ST
TO
OR
RS
S
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