VSC600P10MS datasheet(1/9 Pages) VBSEMI

部品番号	VSC600P10MS

部品情報	P-Channel 100-V (D-S) MOSFET

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1

P-Channel 100-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

• TrenchFET® Power MOSFET

APPLICATIONS

•

Load Switch

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

- 100

0.200 at VGS = - 10 V

- 4.1

5.1 nC

0.2

52 at V

GS = - 4.5 V

- 3.1

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under Steady State conditions is 110 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 100

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 4.1

A

TC = 70 °C

- 3.1

TA = 25 °C

- 4.1b, c

TA = 70 °C

- 3.3b, c

Pulsed Drain Current

IDM

- 20

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 2.5

TA = 25 °C

- 1.67b, c

Maximum Power Dissipation

TC = 25 °C

PD

3.0

W

TC = 70 °C

2.0

TA = 25 °C

2.0b, c

TA = 70 °C

1.3b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 5 s

RthJA

55

62.5

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

34

41

TSOP-6

Top V iew

6

4

1

2

3

5

2.85 mm

3 mm

(4) S

(3) G

(1, 2, 5, 6) D

P-Channel MOSFET

VSC600P10MS

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