VSC600P10MS datasheet(3/9 Pages) VBSEMI

部品番号	VSC600P10MS

部品情報	P-Channel 100-V (D-S) MOSFET

PDF	9 Pages

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メーカー	VBSEMI [VBsemi Electronics Co.,Ltd]

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VDS - Drain-to-Source Voltage (V)

VGS = 10 thru 5 V

VGS = 3 V

VGS = 4 V

VGS = 2 V

0.00

0.04

0.08

0.12

0.16

0.20

ID - Drain Current (A)

VGS = 10 V

VGS = 4.5 V

0246

ID = 4.1 A

Qg - Total Gate Charge (nC)

VDS = 24 V

VDS = 15 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

012

VGS - Gate-to-Source Voltage (V)

TC = 125 °C

TC = 25 °C

TC = - 55 °C

Crss

200

400

600

800

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

100

125

150

TJ - Junction Temperature (°C)

VGS = 10 V, ID = 4.1 V

VGS = 4.5 V, ID = 4.1 A

VSC600P10MS

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