©NEC Electronics Corporation 2004

78K0/KF2

ZUD-CC-04-0129-E

Data Published Oct 2004 N CP(K)

Flash Memory Programming Characteristics

(TA = -40 to +85

°C, 2.3 V ≤ VDD = EVDD ≤ 5.5 V, 2.3 V ≤ AVREF ≤ VDD = EVDD, VSS = EVSS = AVSS = 0 V)

(1) Basic characteristics

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

VDD supply voltage

IDD

fXP = 10 MHz (TYP.), 20 MHz (MAX.)

4.5

11.0

mA

Chip unit

Teraca

20

T.B.D

ms

Erase time

Note1

Sector unit

Terasa

20

T.B.D

ms

Write time

Twrwa

50.

T.B.D.

µs

Number of rewrites per chip

Cerwr

1 erase + 1 write after erase = 1

rewrite

Note2

100

time

Notes 1. The prewrite time before erasure and the erase verify time (writeback time) are not included.

2.

When a product is first written after shipment, “erase

→ write” and “write only” are both taken

as one rewrite.

(2) Serial write operation characteristics

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Time from RESET

↑ to FLMD0 count

start

TRFCF

T.B.D

10

T.B.D

ms

Count execution time

TCOUNT

T.B.D

10

T.B.D

ms

FLMD0 counter high-/low-level width TCH/TCL

Tc x 0.45

µs

FLMD0 counter rise/fall time

TR/TF

12.5

µs

Remark

These values may change after evaluation.

Serial Write Operation

RESET

FLMD0

VDD

0 V

VDD

0 V

TRFCF

TCL

TF

TR

TCOUNT

TCH

TC