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STTH112 データシート(PDF) 3 Page - STMicroelectronics

部品番号 STTH112
部品情報  High voltage ultrafast rectifier
PDF  7 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH112 データシート(HTML) 3 Page - STMicroelectronics

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STTH112
Electrical characteristics
3/7
Figure 3.
Relative variation of thermal
impedance junction ambient versus
pulse duration (epoxy FR4,
Lleads = 10mm) (DO-41).
Figure 4.
Relative variation of thermal
impedance junction ambient versus
pulse duration (epoxy FR4) (SMA).
Z/R
th(j-c)
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
T
δ=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Z/R
th(j-c)
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
T
δ=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Figure 5.
Relative variation of thermal
impedance junction ambient versus
pulse duration (epoxy FR4)(SMB).
Figure 6.
Thermal resistance junction to
ambient versus copper surface
under each lead (epoxy printed
circuit board FR4, copper
thickness: 35 µm) (DO-41, SMB).
Figure 7.
Thermal resistance junction to
ambient versus copper surface
under each lead (epoxy printed
circuit board FR4, copper
thickness: 35 µm) (SMA).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Z/R
th(j-c)
th(j-c)
T
δ=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
R
(°C/W)
th(j-a)
0
10
20
30
40
50
60
70
80
90
100
110
012
34567
89
10
S(cm²)
DO-41
L
=10mm
leads
SMB
R
(°C/W)
th(j-a)
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
S(cm²)
SMA



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