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PCF8535 データシート(PDF) 33 Page - NXP Semiconductors |
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PCF8535 データシート(HTML) 33 Page - NXP Semiconductors |
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33 / 52 page ![]() 1999 Aug 24 33 Philips Semiconductors Objective specification 65 × 133 pixel matrix driver PCF8535 10 DC CHARACTERISTICS VDD = 4.5 to 5.5 V; VSS =0V; VLCD = 4.5 to 16.0 V; Tamb = −40 to +85 °C; unless otherwise specified. Notes 1. LCD outputs are open-circuit, inputs at VDD or VSS, bus inactive, fOSC = typical internal oscillator frequency. 2. Conditions are: VDD1 to VDD3 = 5.0 V, VLCD = 12.0 V and external VLCD. 3. Power-down mode. During power-down all static currents are switched off. 4. Conditions are: VDD1 to VDD3 = 5.0 V, VLCD =VDD2 and external VLCD. 5. Internal VLCD generation or external VLCD. 6. Conditions are: VDD1 to VDD3 = 5.0 V, VLCD = 12.0 V and voltage multiplier = 3VDD. 7. ILCD =10 µA. Outputs tested one at a time. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies VLCDIN LCD supply voltage Mux mode 1 : 65 8.0 − 16.0 V Mux mode 1 : 49 8.0 − 16.0 V Mux mode 1 : 34 −− 16.0 V Mux mode 1 : 26 −− 16.0 V Mux mode 1 : 17 −− 16.0 V ILCDIN LCD supply current normal mode; notes 1 and 2 − 40 90 µA normal mode; notes 1 and 4 − 18 40 µA VLCDOUT generated supply voltage LCD voltage generator enabled −− 16.0 V VDD1, VDD2, VDD3 supply voltage 4.5 − 5.5 V IDD supply current power-down mode; notes 1, 3 and 5 − 210 µA display off mode; notes 1 and 5 −−−µA normal mode; notes 1 and 6 − 160 350 µA normal mode; notes 1 and 2 − 40 90 µA Logic VIL LOW-level input voltage VSS − 0.3VDD V VIH HIGH-level input voltage 0.7VDD − VDD V IOL LOW-level output current (SDA) VOL = 0.4 V; VDD = 5 V 3.0 −− mA IL leakage current VI =VDD or VSS −1 − +1 µA Column and row outputs Ro(col) column output resistance C0 to C132 VLCD = 12 V; note 7 −− 10 k Ω Ro(row) row output resistance R0 to R33 VLCD = 12 V; note 7 −− 3.0 k Ω Vbias(col) bias tolerance C0 to C132 −100 0 +100 mV Vbias(row) bias tolerance R0 to R64 −100 0 +100 mV Temperature coefficient tcut cut point temperature Tamb = −20 to +70 °C − 27 −°C |
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