1996 May 09

2

Philips Semiconductors

Product specification

PNP transistor/Schottky-diode module

PZTM1102

FEATURES

• Low output capacitance

• Fast switching time

• Integrated Schottky protection

diode.

APPLICATIONS

• High-speed switching for industrial

applications.

DESCRIPTION

Combination of a PNP transistor and a Schottky barrier diode in a plastic

SOT223 package. NPN complement: PZTM1101.

PINNING

PIN

DESCRIPTION

1

cathode Schottky

2

base

3

emitter

4

collector, anode Schottky

Fig.1 Simplified outline (SOT223) and symbol.

Marking code: TM1102.

handbook, halfpage

4

1

1

4

2

3

2

3

MAM237

Top view

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

2. It is not allowed to dissipate the total power of 1.2 W in the Schottky die only.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

PNP transistor

collector-base voltage

open emitter

−

−40

V

collector-emitter voltage

−

−40

V

emitter-base voltage

open collector

−

−6

V

collector current (DC)

−

−200

mA

Schottky barrier diode

continuous reverse voltage

−

40

V

forward current (DC)

−

1

A

average forward current

−

1

A

P

power dissipation

−

0.5

W

junction temperature

reverse current applied

−

125

°C

forward current applied

−

150

°C

Combined device

total power dissipation

−

1.2

W

operating ambient temperature

−55

+150

°C

storage temperature

−55

+150

°C

junction temperature

−

150

°C