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PESD1LIN データシート(PDF) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

部品番号 PESD1LIN
部品情報  SOD-323 ESD PROTECTION DEVICES R
PDF  7 Pages
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メーカー  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
ホームページ  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

PESD1LIN データシート(HTML) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

  PESD1LIN Datasheet HTML 1Page - EVER SEMICONDUCTOR CO.,LIMITED PESD1LIN Datasheet HTML 2Page - EVER SEMICONDUCTOR CO.,LIMITED PESD1LIN Datasheet HTML 3Page - EVER SEMICONDUCTOR CO.,LIMITED PESD1LIN Datasheet HTML 4Page - EVER SEMICONDUCTOR CO.,LIMITED PESD1LIN Datasheet HTML 5Page - EVER SEMICONDUCTOR CO.,LIMITED PESD1LIN Datasheet HTML 6Page - EVER SEMICONDUCTOR CO.,LIMITED PESD1LIN Datasheet HTML 7Page - EVER SEMICONDUCTOR CO.,LIMITED  
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Characteristics
[1]
Non-repetitive current pulse 8/20
s exponential decay waveform according to IEC 61000-4-5.
Table 6.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff voltage
PESD1LIN (15 V)
-
-
15
V
PESD1LIN (24 V)
-
-
24
V
IRM
reverse leakage current
PESD1LIN (15 V)
VRWM = 15 V
-
< 1
50
nA
PESD1LIN (24 V)
VRWM = 24 V
-
< 1
50
nA
VBR
breakdown voltage
IR = 5 mA
PESD1LIN (15 V)
17.1
18.9
20.3
V
PESD1LIN (24 V)
25.4
27.8
30.3
V
Cd
diode capacitance
VR = 0 V; f = 1 MHz
-
13
17
pF
VCL
clamping voltage
[1]
PESD1LIN (15 V)
IPP = 1 A
-
-
25
V
IPP = 5 A
-
-
44
V
PESD1LIN (24 V)
IPP = 1 A
-
-
40
V
IPP = 3 A
-
-
70
V
rdif
differential resistance
PESD1LIN (15 V)
IR = 1 mA
-
-
225
PESD1LIN (24 V)
IR = 1 mA
-
-
300
Tamb =25 C
Fig 3.
Peak pulse power as a function of exponential
pulse duration; typical values
Fig 4.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
006aaa164
103
102
104
PPP
(W)
10
tp (μs)
1104
103
10
102
Tj (°C)
0
200
150
50
100
001aaa193
0.4
0.8
1.2
PPP
0
PPP(25°C)
PESD1LIN
Rev:2023A2
3



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