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PESD1LIN データシート(PDF) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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PESD1LIN データシート(HTML) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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2 / 7 page ![]() Limiting values [1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit PPP peak pulse power tp = 8/20 s [1] - 160 W IPP peak pulse current tp = 8/20 s [1] - 3 A Tj junction temperature - 150 C Tamb ambient temperature 65 +150 C Tstg storage temperature 65 +150 C PESD1LIN Rev:2023A2 2 [1] Device stressed with ten non-repetitive ESD pulses. Table 4. ESD maximum ratings Symbol Parameter Conditions Min Max Unit VESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) [1] -23 kV MIL-STD-883 (human body model) -10 kV Table 5. ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV Fig 1. 8/20 s pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 t ( μs) 040 30 10 20 001aaa630 40 80 120 IPP (%) 0 e−t 100 % IPP; 8 μs 50 % IPP; 20 μs 001aaa631 IPP 100 % 90 % t 30 ns 60 ns 10 % tr = 0.7 ns to 1 ns |
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