3N120-E3

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-D137.c

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ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

1200

V

Gate-Source Voltage

VGSS

±30

V

Drain Current

Continuous

ID

3

A

Pulsed (Note 2)

IDM

6

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

75

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

2.9

V/ns

Power Dissipation

TO-220/TO-263

PD

68

W

TO-220F1

18

W

Junction Temperature

TJ

+150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L = 30mH, IAS = 2.25A, VDD = 100V, RG = 25Ω, Starting TJ = 25°C.

4. ISD ≤ 3.0A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C.

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THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

θJA

62.5

°C/W

Junction to Case

TO-220/TO-263

θJC

1.83

°C/W

TO-220F1

6.94

°C/W