3N120-E3

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R502-D137.c



ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250μA

1200

V

Drain-Source Leakage Current

IDSS

VDS=1200V, VGS=0V

10

μA

Gate-Source Leakage Current

IGSS

VGS=±30V, VDS=0V

±100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250μA

3.0

5.0

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=1.5A

7.0

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1MHz

570

pF

Output Capacitance

COSS

60

pF

Reverse Transfer Capacitance

CRSS

13

pF

SWITCHING CHARACTERISTICS

Total Gate Charge (Note 1)

QG

VDS=960V, VGS=10V, ID=3.0A

(Note 1, 2)

28

nC

Gate-Source Charge

QGS

12

nC

Gate-Drain Charge

QGD

10

nC

Turn-On Delay Time (Note 1)

tD(ON)

VDD=100V, VGS=10V,

ID=3.0A, RG=25Ω (Note 1, 2)

11

ns

Turn-On Rise Time

tR

20

ns

Turn-Off Delay Time

tD(OFF)

69

ns

Turn-Off Fall Time

tF

43

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

IS

3

A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

6

A

Drain-Source Diode Forward Voltage (Note 1)

VSD

IS=3.0A, VGS=0V

1.4

V

Body Diode Reverse Recovery Time (Note 1)

trr

IS=3.0A, VGS=0V,

dIF/dt=100A/µs

780

nS

Body Diode Reverse Recovery Charge

Qrr

5.07

μC

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.