GE730

Page: 2/5

ISSUED DATE :2005/08/30

REVISED DATE :

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

400

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.36

-

V/ :

Gate Threshold Voltage

2.0

-

4.0

V

Forward Transconductance

-

30

-

S

Gate-Source Leakage Current

-

-

D100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

10

uA

-

-

100

uA

Static Drain-Source On-Resistance

-

-

1

Ł

-

35

-

Gate-Source Charge

-

3.7

-

Gate-Drain (“Miller”) Change

-

20

-

nC

-

8

-

Rise Time

-

20

-

Turn-off Delay Time

-

47

-

Fall Time

-

18

-

ns

Input Capacitance

-

565

-

Output Capacitance

-

70

-

Reverse Transfer Capacitance

-

38

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.5

V

-

-

5.5

A

1

-

-

23

A

Notes: 1. Pulse width limited by safe operating area.

3. Pulse width 300us, duty cycle 2%.