GE730 datasheet(1/5 Pages) GTM

部品番号	GE730

部品情報	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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メーカー	GTM [GTM CORPORATION]

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GE730

Page: 1/5

ISSUED DATE :2005/08/30

REVISED DATE :

G

G E

E 773300

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GE730 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-220 is universally preferred for all commercial-industrial applications. The device is suited for switch

mode power supplies, DC-AC converters and high current high speed switching circuits.

Features

*Dynamic dv/dt Rating

*Repetitive Avalanche Rated

*Simple Drive Requirement

*Fast Switching

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.40

4.80

c1

1.25

1.45

b

0.76

1.00

b1

1.17

1.47

c

0.36

0.50

L

13.25

14.25

D

8.60

9.00

e

2.54 REF.

E

9.80

10.4

L1

2.60

2.89

L4

14.7

15.3

Ø

3.71

3.96

L5

6.20

6.60

A1

2.60

2.80

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

400

V

Gate-Source Voltage

VGS

f 30

V

Continuous Drain Current, VGS@10V

ID @TC=25 :

5.5

A

Continuous Drain Current, VGS@10V

ID @TC=100 :

3.5

A

Pulsed Drain Current1

IDM

23

A

Total Power Dissipation

PD @TC=25 :

74

W

Linear Derating Factor

0.59

W/

Single Pulse Avalanche Energy2

EAS

260

mJ

Avalanche Current

IAR

5.5

A

Repetitive Avalanche Energy

EAR

7

mJ

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-case

Max.

Rthj-c

1.7

/W

Thermal Resistance Junction-ambient

Max.

Rthj-a

62

/W

BVDSS

400V

RDS(ON)

1.0

ID

5.5A

Pb Free Plating Product

同様の部品番号 - GE730

メーカー	部品番号	データシート	部品情報
E-Tech Electronics LTD	GE730	317Kb / 5P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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