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M65KG512AB データシート(PDF) 23 Page - STMicroelectronics

部品番号 M65KG512AB
部品情報  512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM
PDF  54 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M65KG512AB データシート(HTML) 23 Page - STMicroelectronics

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Registers description
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5
Registers description
The DDR Mobile RAM has the two mode registers, the Mode Register and the Extended
Mode register.
5.1
Mode Register description
The Mode Register is used to select the CAS Latency, Burst Type, and Burst Length of the
device:
●
The CAS Latency defines the number of clock cycles after which the first data will be
output during a Burst Read operation.
●
The Burst Type specifies the order in which the burst data will be addressed. This order
is programmable either to sequential or interleaved (see Table 5: Burst Type Definition).
●
The Burst Length is the number of words that will be output or input during a Burst
Read or Write operation. It can be configured as 2, 4, 8, or 16 words.
The Mode Register must be programmed at the end of the Power-Up sequence prior to
issuing any command. It is loaded by issuing a Section 3.1: Mode Register Set command
(MRS), with BA0-BA1 are set to ‘00’ to select the Mode Register.
Table 7: Mode Register definition shows the available Mode Register configurations.
Table 7.
Mode Register definition
Address
bits
Mode
Register bit
Register
description
Value
Description
A12-A7
-
-
000000
A6-A4
MR6-MR4
CAS Latency Bits
(Read Operations)
011
3 Clock Cycles
Other configurations reserved
A3
MR3
Burst Type Bit
0
Sequential
1
Interleaved
A2-A0
MR2-MR0
Burst Length Bit
001
2 words
010
4 words
011
8 words
100
16 words
Other configurations reserved
BA1-BA0
-
-
00



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